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| DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. It features excellent output voltage capabilities, and is primarily intended for use in MATV applications. PNP complement is the BFG31. 1 Top view BFG97 PINNING PIN 1 2 3 4 DESCRIPTION emitter base emitter collector age 4 2 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain up to Ts = 125 C (note 1) IC = 70 mA; VCE = 10 V; Tj = 25 C IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 70 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C Vo output voltage IC = 70 mA; VCE = 10 V; dim = -60 dB; RL = 75 ; f(p+q-r) = 793.25 MHz; Tamb = 25 C open base CONDITIONS open emitter MIN. - - - - 25 - - - - TYP. - - - - 80 5.5 16 12 700 MAX. 20 15 100 1 - - - - - GHz dB dB mV UNIT V V mA W LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 125 C (note 1) open base open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 20 15 3 100 1 150 175 UNIT V V V mA W C C September 1995 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cc Ce Cre GUM PARAMETER collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB = 10 V IC = 70 mA; VCE = 10 V IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 10 V; f = 1 MHz IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 70 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C Vo d2 output voltage second order intermodulation distortion note 2 note 3 note 4 note 5 MIN. - 25 - - - - - - - - - - TYP. - 80 5.5 1.5 6.5 1 16 12 750 700 -56 -53 PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 125 C (note 1) BFG97 THERMAL RESISTANCE 50 K/W MAX. 100 - - - - - - - - - - - UNIT nA GHz pF pF pF dB dB mV mV dB dB Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM S 21 = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22 2 2. dim = -60 dB (DIN 45004B); IC = 70 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C Vp = Vo at dim = -60 dB; Vq = Vo -6 dB; fp = 445.25 MHz; Vr = Vo -6 dB; fq = 453.25 MHz; fr = 455.25 MHz; measured at f(p+q-r) = 443.25 MHz. 3. dim = -60 dB (DIN 45004B); IC = 70 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C Vp = Vo at dim = -60 dB; Vq = Vo -6 dB; fp = 795.25 MHz; Vr = Vo -6 dB; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz. 4. IC = 70 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vp = Vq = Vo = 50 dBmV; f(p+q) = 450 MHz; fp = 50 MHz; fq = 400 MHz. 5. IC = 70 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vp = Vq = Vo = 50 dBmV; f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz. September 1995 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 handbook, full pagewidth VBB input 75 C2 , L2 C4 C7 L4 C3 L5 L6 C8 R1 R2 C1 L1 L3 DUT C5 C6 R3 R4 MBB807 VCC output 75 Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. List of components (see test circuit) DESIGNATION C2, C3, C7, C8 C1, C4, C6 C5 (note 1) L1 (note 1) L2 L3 L4, L5 (note 1) L6 L7 R1 R2 (note 1) R3, R4 Notes The circuit has been built on a double copper-clad printed circuit board with PTFE dielectric (r = 2.2); thickness 116 inch; thickness of copper sheet 2 x 35 m. 1. Components C5, L1, L4, L5, and R2 are mounted on the underside of the PCB. DESCRIPTION multilayer ceramic capacitor multilayer ceramic capacitor miniature ceramic plate capacitor 0.5 turns 0.4 mm copper wire microstripline microstripline 1.5 turns 0.4 mm copper wire microstripline Ferroxcube choke metal film resistor metal film resistor metal film resistor 75 5 H 10 k 220 30 75 75 VALUE 10 nF 1.2 pF 10 nF int. dia. 3 mm length 14 mm; width 2.5 mm length 8 mm; width 2.5 mm int. dia. 3 mm; winding pitch 1 mm length 19 mm; width 2.5 mm 3122 108 20153 2322 180 73103 2322 180 73221 2322 180 73309 DIMENSIONS CATALOGUE NO. 2222 590 08627 2222 851 12128 2222 629 08103 September 1995 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 handbook, full pagewidth VBB C3 VCC C7 R1 R3 L5 L2 C4 R4 R2 L4 C5 L3 C6 L6 L7 75 input C1 C2 L1 C8 75 output MEA971 handbook, full pagewidth 80 mm 60 mm MEA969 handbook, full pagewidth 80 mm 60 mm mounting screws M 2.5 (8x) MEA970 Fig.3 Intermodulation distortion and second order intermodulation distortion printed circuit board. September 1995 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 MBB797 MBB774 handbook, halfpage P 1.2 tot (W) handbook, halfpage 120 1.0 h FE 0.8 80 0.6 0.4 40 0.2 0 0 50 100 150 Ts 200 ( o C) 0 0 40 80 I C (mA) 120 VCE = 10 V; Tj = 25 C. Fig.4 Power derating curve. Fig.5 DC current gain as a function of collector current. handbook, halfpage 3 MBB798 handbook, halfpage 8 MBB773 C re (pF) 2 fT (GHz) 6 4 1 2 0 0 10 VCE (V) 20 0 0 40 80 I C (mA) 120 IE = 0; f = 1 MHz; Tj = 25 C. VCE = 10 V; f = 500 MHz; Tj = 25 C. Fig.6 Feedback capacitance as a function of collector-emitter voltage. Fig.7 Transition frequency as a function of collector current. September 1995 6 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 handbook, halfpage 45 MBB799 d im (dB) handbook, halfpage 45 MBB796 d im (dB) 50 50 55 55 60 60 65 65 70 20 40 60 80 100 120 I C (mA) 70 20 40 60 80 100 120 I C (mA) VCE = 10 V; Vo = 750 mV; f(p+q-r) = 443.25 MHz; Tamb = 25 C. VCE = 10 V; Vo = 700 mV; f(p+q-r) = 793.25 MHz; Tamb = 25 C. Fig.8 Intermodulation distortion as a function of collector current. Fig.9 Intermodulation distortion as a function of collector current. handbook, halfpage 45 MBB800 d2 (dB) handbook, halfpage 45 MBB801 d2 (dB) 50 50 55 55 60 60 65 65 70 20 40 60 80 100 120 I C (mA) 70 20 40 60 80 100 120 I C (mA) VCE = 10 V; Vo = 50 dBmV; f(p+q) = 450 MHz; Tamb = 25 C. VCE = 10 V; Vo = 50 dBmV; f(p+q) = 810 MHz; Tamb = 25 C. Fig.10 Second order intermodulation distortion as a function of collector current. Fig.11 Second order intermodulation distortion as a function of collector current. September 1995 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 handbook, halfpage Z 60 MEA963 L () 50 40 30 handbook, halfpage Z 60 50 MEA964 L () RL 40 30 RL 20 20 10 0 -10 XL -20 0 0.25 0.50 0.75 -10 1 POUT (W) 0 0.25 0.50 0.75 10 0 XL 1 POUT (W) VCE = 6 V; f = 900 MHz. VCE = 7.5 V; f = 900 MHz. Fig.12 Load impedance as a function of output power. Fig.13 Load impedance as a function of output power. handbook, halfpage Z 60 50 40 MEA965 L () RL 30 20 10 0 -10 XL 0 0.25 0.50 0.75 1 POUT (W) VCE = 10 V; f = 900 MHz. Fig.14 Load impedance as a function of output power. September 1995 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 MEA957 MEA958 handbook, halfpage 20 handbook, halfpage 20 Zi () 15 Zi () 15 10 xi ri 10 ri xi 5 5 0 0 -5 0 0.25 0.50 0.75 -5 1 POUT (W) 0 0.25 0.50 0.75 1 POUT (W) VCE = 6 V; f = 900 MHz. VCE = 7.5 V; f = 900 MHz. Fig.15 Input impedance as a function of output power. Fig.16 Input impedance as a function of output power. MEA959 handbook, halfpage 20 Zi () 15 ri 10 5 xi 0 5 -10 0 0.25 0.50 0.75 1 POUT (W) VCE = 10 V; f = 900 MHz. Fig.17 Input impedance as a function of output power. September 1995 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 MEA961 handbook, halfpage 80 MEA962 (%) 70 handbook, halfpage 1.5 P OUT (W) 1 V CE = 10 V 7.5 V 6V 7.5 V 0.5 60 V CE = 6 V 50 10 V 40 0 0.5 1 POUT (W) 1.5 0 0 100 200 P IN (mW) 300 f = 900 MHz. f = 900 MHz. Fig.18 Efficiency as a function of output power. Fig.19 Output power as a function of input power. MEA960 MBB802 handbook, halfpage 10 handbook, halfpage 50 Gp (dB) 8 V CE = 10 V 7.5 V 4 6V 2 G UM (dB) 40 6 30 20 10 0 0 0.5 1 POUT (W) 1.5 0 10 102 103 f (MHz) 104 f = 900 MHz. IC = 70 mA; VCE = 10 V; Tamb = 25 C. Fig.20 Power gain as a function of output power. Fig.21 Maximum unilateral power gain as a function of frequency. September 1995 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 50 handbook, full pagewidth 25 100 40 MHz 10 250 +j 0 -j 10 25 50 100 250 10 2 GHz 250 25 50 IC = 70 mA; VCE = 10 V; Tamb = 25 C. Zo = 50 . 100 MBB803 Fig.22 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 120 o 60 o 150 o 2 GHz 30 o 100 180 o 80 60 40 20 40 MHz 0o 150 o 30 o 120 o 90 o IC = 70 mA; VCE = 10 V; Tamb = 25 C. 60 o MBB806 Fig.23 Common emitter forward transmission coefficient (S21). September 1995 11 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 90 o handbook, full pagewidth 120 o 60 o 150 o 2 GHz 30 o 180 o 0.5 0.4 0.3 0.2 0.1 40 MHz 0o 150 o 30 o 120 o 90 o IC = 70 mA; VCE = 10 V; Tamb = 25 C. 60 o MBB805 Fig.24 Common emitter reverse transmission coefficient (S12). 50 handbook, full pagewidth 25 100 10 2 GHz +j 0 -j 10 25 50 100 250 250 10 40 MHz 250 25 50 IC = 70 mA; VCE = 10 V; Tamb = 25 C. Zo = 50 . 100 MBB804 Fig.25 Common emitter output reflection coefficient (S22). September 1995 12 Philips Semiconductors Product specification NPN 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads BFG97 SOT223 D B E A X c y HE b1 vMA 4 Q A A1 1 e1 e 2 bp 3 wM B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 96-11-11 97-02-28 September 1995 13 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFG97 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 14 |
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